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TrenchMV TM
Power MOSFET
IXTC180N085T
V DSS
I D25
R DS(on)
= 85V
= 110A
≤ 6.1m Ω
( Electrically Isolated Back) Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
ISOPLUS220
E153432
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
85
85
V
V
G
DS
Isolated Back Surface
V GSM
I D25
I LRMS
Transient
T C = 25 ° C
Lead Current Limit, RMS
± 20
110
75
V
A
A
G = Gate
S = Source
D = Drain
I DM
I A
E AS
P D
T J
T JM
T stg
T L
V ISOL
M d
Weight
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
50/60Hz, t = 1 minute, I ISOL < 1mA, RMS
Mounting Force
480
25
1.0
150
-55 ... +175
175
-55 ... +175
300
260
2500
11..65 / 2.5..14.6
2
A
A
J
W
° C
° C
° C
° C
° C
V
N/lb.
g
Features
International Standard Package
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Automotive
- Motor Drives
- DC/DC Conversion
BV DSS
V GS(th)
I GSS
I DSS
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
85
2.0
V
4.0 V
± 200 nA
5 μ A
250 μ A
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching Applications
Distributed Power Architechtures
R DS(on)
V GS = 10V, I D = 25A, Notes 1, 2
6.1 m Ω
and VRMs
Electronic Valve Train Systems
High Voltage Synchronous Recifiers
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DS99676A(03/09)
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